| 摘要 |
PROBLEM TO BE SOLVED: To provide a nonvolatile memory cell structure of an antifuse type, and a method for programming and reading the nonvolatile memory cell structure.SOLUTION: A nonvolatile memory cell structure includes a doping well 120 disposed in a substrate, an antifuse gate 160 disposed on the doping well, a drain 151 disposed in the substrate, an optional select gate disposed on the doping well and an optional shallow trench isolation 140 disposed inside the doping well. |
