| 摘要 |
PROBLEM TO BE SOLVED: To provide a low-resistance transparent conductive film which is obtained by using a target for sputtering capable of achieving high-speed film formation and a nodule-less form, absorbs less blue light and has a low resistance, and to provide a transparent conductive substrate.SOLUTION: To provide an amorphous transparent conductive film formed on a substrate by sputtering using a target obtained by processing an oxide sintered body composed of indium and gallium. The oxide sintered body contains an InOphase of a bixbyite type structure as the main crystal phase and a GaInOphase of a &bgr;-GaOtype structure or a GaInOphase and a (Ga,In)Ophase which are dispersed finely as crystal particles of an average particle size of 5 μm or smaller. The transparent conductive film has a gallium content of 10 atom% or more and lower than 35 atm%, in terms of Ga/(In+Ga) atomic ratio, and density of 6.3 g/cmor higher. |
