发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a semiconductor device and a method for manufacturing the same which can prevent reduction of a short circuit and voltage-withstanding between wiring due to a metal residue caused by reformation of the wiring.SOLUTION: A semiconductor device is provided with a recess part pattern for polishing acceleration in which a barrier film is formed on a surface in a region having coarse embedded wiring. |
申请公布号 |
JP2014194973(A) |
申请公布日期 |
2014.10.09 |
申请号 |
JP20130070126 |
申请日期 |
2013.03.28 |
申请人 |
FUJITSU LTD |
发明人 |
SUDA SHOICHI |
分类号 |
H01L21/3205;H01L21/768;H01L23/12;H01L23/522 |
主分类号 |
H01L21/3205 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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