Nanogap in-between noble metals

摘要

A nanogap of controlled width in-between noble metals is produced using sidewall techniques and chemical-mechanical-polishing. Electrical connections are provided to enable current measurements across the nanogap for analytical purposes. The nanogap in-between noble metals may also be formed inside a Damascene trench. The nanogap in-between noble metals may also be inserted into a crossed slit nanopore framework. A noble metal layer on the side of the nanogap may have sub-layers serving the purpose of multiple simultaneous electrical measurements.

主权项

1. A method, comprising:
using a sidewall technique to form a sacrificial layer of a controlled thickness on a sidewall of a first layer and on a sidewall of a first adjunct layer, wherein said first layer and said first adjunct layer have a common interface, and wherein said sacrificial layer is substantially perpendicular to said common interface; disposing a second layer covering said first adjunct layer, followed by disposing a second adjunct layer covering said second layer, wherein said sacrificial layer separates said sidewall of said first layer from a sidewall of said second layer; chemical-mechanical-polishing said second adjunct layer until said second layer has an exposed portion over said first adjunct layer; etching away said exposed portion of said second layer; CMP said first adjunct and said second adjunct layers until either of said first layer or said second layer become exposed; etching away said sacrificial layer; wherein said first layer comprises a first noble metal and said second layer comprises a second noble metal; and wherein said method is characterized as forming a nanogap of a selected width in-between noble metals, and wherein said selected width essentially equals said controlled thickness of said sacrificial layer.