| 发明名称 |
NON-POLAR (Al, B, In, Ga) N QUANTUM WELL, HETEROSTRUCTURE MATERIAL, AND DEVICE |
| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for forming a non-polar (Al, B, In, and Ga) N quantum well, heterostructure material, and a nitride semiconductor device.SOLUTION: One or more non-polar (1120)a-plane GaN layer is grown on an r-plane (1102) sapphire substrate by utilizing metallorganic chemical vapor deposition MOCVD. The non-polar (1120)a-plane GaN layer comprises a template for producing a non-polar (Al, B, In, and Ga)N quantum well, the heterostructure material, and a device. |
| 申请公布号 |
JP2014195125(A) |
申请公布日期 |
2014.10.09 |
| 申请号 |
JP20140133816 |
申请日期 |
2014.06.30 |
| 申请人 |
REGENTS OF THE UNIV OF CALIFORNIA |
发明人 |
CRAVEN MICHAEL D;KELLER STACIA;DENBAARS STEVEN P;MARGALITH TAL;SPECK JAMES S;NAKAMURA SHUJI;MISHRA UMESH K |
| 分类号 |
H01L21/205;C23C16/04;C30B25/02;C30B25/04;C30B25/10;C30B25/18;C30B29/38;C30B29/40;C30B29/60;H01L33/00;H01L33/32;H01S5/343 |
主分类号 |
H01L21/205 |
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