METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE

摘要

A performance and reliability of a semiconductor device are improved. On a semiconductor substrate, a gate electrode for a first MISFET and a dummy gate electrode for a second MISFET are formed, and then, an insulating film is partially formed on the gate electrode. Then, on the semiconductor substrate, an insulating film is formed so as to cover the dummy gate electrode, the gate electrode and other insulating film. Then, the dummy gate electrode is exposed by polishing the insulating film. In this polishing, the insulating film is polished under a condition that a polishing speed of the other insulating film is smaller than a polishing speed of the insulating film. Then, after the dummy gate electrode is removed, the gate electrode for the second MISFET is formed in a region where the dummy gate electrode has been removed.

主权项

1. A method of manufacturing a semiconductor device, comprising the steps of:
(a) preparing a semiconductor substrate; (b) forming a first gate electrode for a first MISFET and a dummy gate electrode for a second MISFET on the semiconductor substrate; (c) partially forming a first film on the first gate electrode; (d) forming an insulating film on the semiconductor substrate so as to cover the first gate electrode, the dummy gate electrode and the first film; (e) exposing the dummy gate electrode by polishing the insulating film; (f) after the step of (e), removing the dummy gate electrode; (g) forming a conductive film on the insulating film so as to fill a trench which is a region where the dummy gate electrode has been removed in the step of (f); and (h) forming a second gate electrode for the second MISFET by polishing the conductive film so as to remove the conductive film outside the trench and leaving the conductive film inside the trench, wherein, in the step of (e), the insulating film is polished under a condition that a polishing speed of the first film is smaller than a polishing speed of the insulating film.