(Al,Ga,In)N DIODE LASER FABRICATED AT REDUCED TEMPERATURE

摘要

A method of fabricating an (Al,Ga,In)N laser diode, comprising depositing one or more III-N layers upon a growth substrate at a first temperature, depositing an indium containing laser core at a second temperature upon layers deposited at a first temperature, and performing all subsequent fabrication steps under conditions that inhibit degradation of the laser core, wherein the conditions are a substantially lower temperature than the second temperature.

主权项

1. A method of fabricating a III-Nitride diode laser, the method comprising:
forming a III-Nitride layer on or above a growth substrate, wherein the III-Nitride layer is formed, using at least deposition, at a first temperature, and wherein the III-Nitride layer comprises an indium-containing active region; and performing at least one subsequent fabrication process at a second temperature that is lower than the first temperature to inhibit degradation of the indium-containing active region, wherein the subsequent fabrication process comprise forming a conducting oxide waveguide or cladding layer on or above the III-Nitride layers at the second temperature.