SPACER PROCESS FOR ON PITCH CONTACTS AND RELATED STRUCTURES

摘要

Methods are disclosed, including for increasing the density of isolated features in an integrated circuit. Also disclosed are associated structures. In some embodiments, contacts are formed on pitch with other structures, such as conductive interconnects that may be formed by pitch multiplication. To form the contacts, in some embodiments, a pattern corresponding to some of the contacts is formed in a selectively definable material such as photoresist. Features in the selectively definable material are trimmed, and spacer material is blanket deposited over the features and the deposited material is then etched to leave spacers on sides of the features. The selectively definable material is removed, leaving a mask defined by the spacer material. The pattern defined by the spacer material may be transferred to a substrate, to form on pitch contacts. In some embodiments, the on pitch contacts may be used to electrically contact conductive interconnects in the substrate.

主权项

1. An integrated circuit structure, comprising:
a plurality of pillars extending on a first axis over a substrate; first and second laterally spaced blocks formed of the same material as the pillars, the first and second blocks extending at least between a first and a last of the pillars on the first axis, wherein the pillars are disposed between and on the same level as the first and second blocks; and spacers disposed on sides of the pillars and on sides of the first and the second blocks.