摘要 |
<p>PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition showing good line edge roughness and a good mask error factor.SOLUTION: The resist composition comprises a resin having a structural unit derived from a compound expressed by formula (aa) and a solvent containing propylene glycol monomethyl ether acetate, in which the propylene glycol monomethyl ether acetate is included by 85.8 wt.% or more in the whole solvent. In the formula, T represents an alicyclic hydrocarbon group and -CH- included in the group may be replaced by at least one -SO- and further may be replaced by -CO-, -O- or the like; Rrepresents a hydrogen atom, a halogen atom or an alkyl group which may have a halogen atom; and Zrepresents a saturated hydrocarbon group which may have a substituent.</p> |