发明名称 RESIN AND RESIST COMPOSITION
摘要 <p>PROBLEM TO BE SOLVED: To provide a chemically amplified photoresist composition showing good line edge roughness and a good mask error factor.SOLUTION: The resist composition comprises a resin having a structural unit derived from a compound expressed by formula (aa) and a solvent containing propylene glycol monomethyl ether acetate, in which the propylene glycol monomethyl ether acetate is included by 85.8 wt.% or more in the whole solvent. In the formula, T represents an alicyclic hydrocarbon group and -CH- included in the group may be replaced by at least one -SO- and further may be replaced by -CO-, -O- or the like; Rrepresents a hydrogen atom, a halogen atom or an alkyl group which may have a halogen atom; and Zrepresents a saturated hydrocarbon group which may have a substituent.</p>
申请公布号 JP2014194555(A) 申请公布日期 2014.10.09
申请号 JP20140094944 申请日期 2014.05.02
申请人 SUMITOMO CHEMICAL CO LTD 发明人 ICHIKAWA KOJI;FUJI YUSUKE;YAMAGUCHI NORIFUMI
分类号 G03F7/039;C07C303/32;C07C309/17;C07D307/00;C07D307/33;C07D327/04;G03F7/004 主分类号 G03F7/039
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