Electrode Mesh Galvanic Cells

摘要

The present invention is directed to the fabrication of thin aluminum anode batteries using a highly reproducible process that enables high volume manufacturing of the galvanic cells. A thin aluminum anode galvanic cell having a meshed structure is provided which includes a catalytic metal layer positioned on a patterned silicon substrate, an etched dielectric layer positioned to cover the catalytic metal layer, the catalytic metal layer serving as an etch stop for the etched dielectric layer and an etched aluminum layer positioned to cover the dielectric layer, the dielectric layer serving as an etch stop for the etched aluminum layer.

主权项

1. A method of fabricating a thin aluminum anode galvanic cell on a silicon wafer, the method comprising:
depositing a catalytic metal layer onto the silicon wafer; depositing a dielectric layer onto the wafer; depositing an aluminum layer on the wafer; patterning the aluminum layer to form a patterned aluminum layer; etching the patterned aluminum layer to form at least one etched aluminum layer, wherein the dielectric layer acts as an etch stop for the etched aluminum layer; etching the dielectric layer, wherein the catalytic metal layer acts as an etch stop and the aluminum electrode acts as a mask, thereby preserving the dielectric layer under the etched aluminum layer and forming the thin aluminum anode galvanic cell on the silicon wafer.