BIT LINE CURRENT TRIP POINT MODULATION FOR READING NONVOLATILE STORAGE ELEMENTS

摘要

Upon selecting non-volatile storage elements to be sensed, the system obtains information about the position of these non-volatile storage elements (2000), determines sensing parameters based at least in part on this information (2002), precharges a charge storage device (2004) and, while maintaining the voltage level of the bit lines of these memory cells at a constant value, applies a reference signal to these non-volatile storage elements for a certain duration of time (2006), afterwards determining whether, for the certain duration of time, the current conducted by these non-volatile storage elements exceeds a predetermined value (2008).