| 摘要 |
PROBLEM TO BE SOLVED: To provide a method for producing an oxide single crystal, with which a long garnet crystal without strain is grown with excellent reproducibility by producing no twist in a shape of the crystal, and suppressing occurrence of a facet on a flat growth interface. SOLUTION: In the method for producing the oxide single crystal, in which a raw material for the single crystal is put in a crucible in a furnace, heated and melted, and subsequently the oxide single crystal is grown by a rotating-pulling method in which a seed crystal is brought into contact with a raw material melt and a growing crystal is pulled up with rotation, pulling up of the growing crystal is started with initial rotation speed (ω<SB POS="POST">0</SB>) of 20 rpm or less, in succession a crystal diameter of the growing crystal is made to increase, interface inversion of the crystal is confirmed, and subsequently a shoulder part is formed by lowering the rotation speed (ω) so as to be in the range indicated by formula (1),ω<SB POS="POST">0</SB>×(L/L<SB POS="POST">0</SB>)>ω>ω<SB POS="POST">0</SB>×(L/L<SB POS="POST">0</SB>)<SP POS="POST">1/4</SP>(1). In formula,ωis rotation speed of the crystal after interface inversion,ω<SB POS="POST">0</SB>is initial rotation speed, L<SB POS="POST">0</SB>is an initial depth of the melt, and L is a depth of the melt during crystal growing. COPYRIGHT: (C)2013,JPO&INPIT |
