| 摘要 |
A photodiode comprises a stack of three superposed layers of semiconductor materials having a first conductivity type. The stack comprises an interaction layer (1) to interact with incident photons to generate photocarriers; a collection layer (2), and a confinement layer (3). The collection layer has a band gap less than the band gaps of the interaction layer and confinement layer. The photodiode also comprises a region (4) which is in contact with collection and confinement layers and has a conductivity type opposite to the first conductivity type to form a p-n junction with the stack. |
