Programming time improvement for non-volatile memory

摘要

Disclosed herein are techniques for providing a programming voltage to a selected word line in a non-volatile memory array. This may be a 3D NAND, 2D NAND, or another type of memory array. The programming voltage may be quickly ramped up on the selected word line, without the need for adding a stronger charge pump to the memory device. The voltage on the selected word line may be ramped up to a target voltage during a channel pre-charge phase. The target voltage may be limited in magnitude so that program disturb does not occur. Next, during a channel boosting phase, the unselected word lines are increased to a boosting voltage. The voltage on the selected word line is also increased during the boosting phase to a second target level. Then, the voltage on the selected word line is charged up from the second target level to a program voltage.

主权项

1. A three-dimensional memory device, comprising:
a substrate; a plurality of sets of non-volatile storage elements formed above the substrate in multiple physical levels of a three-dimensional memory array, each of the sets having an active area comprising a channel that extends vertically through the physical levels; a plurality of bit lines associated with the plurality of sets of non-volatile storage elements; a plurality of word lines associated with the plurality of sets of non-volatile storage elements; and a circuitry in communication with the plurality of sets of non-volatile storage elements, the plurality of bit lines and the plurality of word lines, the circuitry applies a first voltage to unselected word lines during a channel pre-charge phase of a programming operation, the circuitry applies a second voltage that is greater than the first voltage to a selected word line during the channel pre-charge phase, the circuitry increases the first voltage on the unselected word lines to a boosting voltage during a boosting/programming phase of the programming operation, the circuitry increases the second voltage on the selected word line to a third voltage that is greater than the boosting voltage during the boosting/programming phase, the circuitry increases the third voltage to a program voltage on the selected word line while maintaining the boosting voltage on the unselected word lines during the boosting/programming phase.