Methods for fabricating integrated circuits including formation of chemical guide patterns for directed self-assembly lithography

摘要

Methods for creating chemical guide patterns by DSA lithography for fabricating an integrated circuit are provided. In one example, an integrated circuit includes forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate. The polymeric material has a neutral polymeric block portion and a pinning polymeric block portion that are coupled together. The bifunctional brush layer includes a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion. A portion of the neutral layer or the pinning layer is selectively removed to define a chemical guide pattern. A block copolymer layer is deposited overlying the chemical guide pattern. The block copolymer layer is phase separated to define a nanopattern that is registered to the chemical guide pattern.

主权项

1. A method for creating chemical guide patterns by directed self-assembly (DSA) lithography for fabricating an integrated circuit comprising:
forming a bifunctional brush layer of a polymeric material overlying an anti-reflective coating on a semiconductor substrate, wherein the polymeric material comprises a neutral polymeric block portion and a pinning polymeric block portion that are coupled together, and wherein the bifunctional brush layer comprises a neutral layer that is formed of the neutral polymeric block portion and a pinning layer that is formed of the pinning polymeric block portion; selectively removing a portion of the neutral layer or the pinning layer to define a chemical guide pattern; depositing a block copolymer layer overlying the chemical guide pattern; and phase separating the block copolymer layer to define a nanopattern that is registered to the chemical guide pattern.