发明名称 Metal inks for improved contact resistance
摘要 Metal ink compositions, methods of forming such compositions, and methods of forming conductive layers are disclosed. The ink composition includes a bulk metal, a transition metal source, and an organic solvent. The transition metal source may be a transition metal capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal. Conductive structures may be made using such ink compositions by forming a silicon-containing layer on a substrate, printing a metal ink composition on the silicon-containing layer, and curing the composition. The metal inks of the present invention have high conductivity and form low resistivity contacts with silicon, and reduce the number of inks and printing steps needed to fabricate integrated circuits.
申请公布号 US8853677(B1) 申请公布日期 2014.10.07
申请号 US201113162193 申请日期 2011.06.16
申请人 Thin Film Electronics ASA 发明人 Rockenberger Joerg;Chen Yu;Zürcher Fabio;Haubrich Scott
分类号 H01L29/08 主分类号 H01L29/08
代理机构 Murabito Hao & Barnes LLP 代理人 Fortney Andrew D.;Murabito Hao & Barnes LLP
主权项 1. An ink composition comprising: a) a bulk metal in an amount of about 1 to 30% by weight of the ink composition; b) a transition metal source comprising a transition metal other than the bulk metal and capable of forming a silicide, in an amount providing from 0.01 to 50 at. % of the transition metal relative to the bulk metal; and c) an organic solvent.
地址 Oslo NO