| 发明名称 | Apparatus for crystal growth | ||
| 摘要 | Apparatus for vapor phase growing of crystals having a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone. A generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs is located on the heated zone. The first limb contains a source material. The second limb supports a seed such that the source material and seed are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source and seed. The crystal is grown on the seed. | ||
| 申请公布号 | US8852343(B2) | 申请公布日期 | 2014.10.07 |
| 申请号 | US200812598538 | 申请日期 | 2008.05.16 |
| 申请人 | Kromek Limited | 发明人 | Basu Arnab;Cantwell Ben;Robinson Max |
| 分类号 | C30B23/06;C30B29/48;C30B25/10;C30B35/00;C23C16/42 | 主分类号 | C30B23/06 |
| 代理机构 | Popovich, Wiles & O'Connell, P.A. | 代理人 | Popovich, Wiles & O'Connell, P.A. |
| 主权项 | 1. An apparatus for the vapour phase growing of crystals, the apparatus comprising: a single multi-zone heater arranged to heat a heated zone to give a predetermined temperature profile along the length of the heated zone; a generally U-shaped tube arranged to be provided within the heated zone, the generally U-shaped tube having a first limb, a second limb, and a linkage connecting the first and second limbs, wherein the first limb has a first length and the second limb has a second length different from the first length, and wherein the first limb has a source region arranged to contain a source material; and, a support for supporting a seed in the second limb such that the support and the source region are spaced longitudinally within the heated zone to provide a predetermined temperature differential between the source region and support. | ||
| 地址 | Sedgefield GB | ||