High voltage cascoded III-nitride rectifier package with etched leadframe

摘要

Some exemplary embodiments of high voltage cascaded III-nitride semiconductor package with an etched leadframe have been disclosed. One exemplary embodiment comprises a III-nitride transistor having an anode of a diode stacked over a source of the III-nitride transistor, and a leadframe that is etched to form a first leadframe paddle portion coupled to a gate of the III-nitride transistor and the anode of the diode, and a second leadframe paddle portion coupled to a drain of the III-nitride transistor. The leadframe paddle portions enable the package to be surface mountable. In this manner, reduced package footprint, improved surge current capability, and higher performance may be achieved compared to conventional wire bonded packages. Furthermore, since multiple packages may be assembled at a time, high integration and cost savings may be achieved compared to conventional methods requiring individual package processing and externally sourced parts.

主权项

1. A wire-bondless surface mountable high voltage semiconductor package comprising:
a III-nitride transistor having a gate, a source, and a drain; a diode having an anode and a cathode, said diode stacked over said III-nitride transistor such that said cathode resides on said source and is mechanically and electrically coupled to said source; an etched leadframe comprising:
a first leadframe paddle portion supporting and directly connected to said gate of said III-nitride transistor using a pedestal and supporting and directly connected to said anode of said diode;a second leadframe paddle portion supporting and connected to said drain of said III-nitride transistor;said first and second leadframe paddle portions enabling said high voltage semiconductor package to be surface mountable.