Semiconductor device having deep wells and fabrication method thereof

摘要

Semiconductor devices and methods of fabricating the same are provided. An insulating film can be disposed on a semiconductor substrate, and insulating film patterns can be formed opening a plurality of areas with predetermined widths by patterning the insulating film. A plurality of ion implantation areas having a first conductivity type can be formed by implanting impurities into the plurality of open areas, and an oxide film pattern can be formed on each of the ion implantation areas. The insulating film patterns can be removed, and ion implantation areas having a second conductivity type can be formed by implanting impurities using the oxide film pattern as a mask. The semiconductor substrate can be annealed at a high temperature to form deep wells.

主权项

1. A method of fabricating a semiconductor device, the method comprising:
disposing an insulating film on a semiconductor substrate; forming insulating film patterns opening a plurality of areas with predetermined widths by patterning the insulating film; forming a plurality of first ion implantation areas having a first conductivity type by implanting first impurities having the first conductivity type into the plurality of open areas; forming an oxide film pattern on each of the first ion implantation areas; removing the insulating film patterns; forming second ion implantation areas having a second conductivity type by implanting second impurities having the second conductivity type using the oxide film pattern as a mask; and annealing the semiconductor substrate at a high temperature, wherein the first conductivity type is different from the second conductivity type.