发明名称 |
Method of manufacturing solar cell |
摘要 |
A method of manufacturing a solar cell having increased light efficiency due to increased gallium distribution on a surface of a light absorption layer, the method including forming a first electrode on a substrate, forming a precursor that includes at least one of copper, gallium, and indium on the first electrode, forming a preliminary light absorption layer by providing selenium to the precursor, forming the preliminary light absorption layer further including performing a heat treatment, and forming a liquid state CuSe compound, forming a light absorption layer by providing a compound including at least one of gallium and indium to the preliminary light absorption layer, and forming a second electrode on the light absorption layer. |
申请公布号 |
US8852992(B2) |
申请公布日期 |
2014.10.07 |
申请号 |
US201113105815 |
申请日期 |
2011.05.11 |
申请人 |
Samsung SDI Co., Ltd.;Samsung Display Co., Ltd. |
发明人 |
Lee Woo-Su;Park Sang-Cheol;Kim Byoung-Dong;Nam Jung-Gyu;Jun Gug-Il;Ahn Dong-Gi;Kim In-Ki |
分类号 |
H01L21/00;H01L21/02;H01L31/032 |
主分类号 |
H01L21/00 |
代理机构 |
Lee & Morse, P.C. |
代理人 |
Lee & Morse, P.C. |
主权项 |
1. A method of manufacturing a solar cell, the method comprising:
forming a first electrode on a substrate; forming a precursor on the first electrode, wherein the precursor includes:
a first layer that includes a CuGa compound or a CuIn compound on the first electrode, anda second layer that includes gallium or indium on the first layer,wherein a composition ratio of copper/(gallium+indium) in the precursor is 1 or more; heating the precursor while adding selenium to form a preliminary light absorption layer including a Cu, In, Ga, Se compound and liquid CuSe; continuing the heating while adding selenium and while adjusting the composition ratio of copper/(gallium+indium) to be about 1 or less by providing a compound including at least one of gallium and indium to the liquid CuSe in the preliminary light absorption layer to form a light absorption layer; and forming a second electrode on the light absorption layer. |
地址 |
Yongin-Si, Gyeonggi-Do KR |