Flash memory device and reading method thereof

摘要

A flash memory device and reading method of the flash memory device. The reading method includes determining a read voltage set of memory cells corresponding to a first word line from at least one of flag cell data of the first word line and flag cell data of a second word line adjacent to the first word line, and reading the memory cells corresponding to the first word line according to the determined read voltage set.

主权项

1. A method of reading a flash memory device, the method comprising:
determining whether a Nth word line (N is a natural number) is a finally written word line; selecting a first read voltage set as a read voltage set for memory cells of the Nth word line, when the Nth word line is not the finally written word line, and selecting a second read voltage set as the read voltage set for the memory cells of the Nth word line, when the Nth word line is the finally written word line; and reading the memory cells of the Nth word line according to the selected read voltage set.