Sense amplifier

摘要

Embodiments of the invention provide a sense amplifier, a SRAM chip comprising the sense amplifier and a method of performing read operation on the SRAM chip. The sense amplifier according to embodiments of the invention comprises an additional driving assist portion, which further takes a global data bus as input, the driving assist portion is configured to enable the sense amplifier to provide assisted driving for other sense amplifiers. With the solution according to embodiments of the invention, driving capability of a sense amplifier on global data bus can be enhanced.

主权项

1. A sense amplifier comprising:
a resolving portion, input of which is connected to output of a storage cell corresponding to the sense amplifier, and output of which is connected to input of a driving assist portion; an output portion, input of which is connected to output of the driving assist portion, and output of which is connected to a global data bus of a chip; the driving assist portion, which further takes the global data bus as input, the driving assist portion is configured to cause the output portion to output high level in following conditions:
a logic value stored in the storage cell corresponds to outputting high level on the global data bus while a read operation is performed on the storage cell;at least one other sense amplifier that outputs to the same global data bus as the sense amplifier outputs high level while the storage cell is not being accessed.