发明名称 Method of fabricating liquid crystal display device
摘要 A method of fabricating a liquid crystal display device includes the steps of forming a gate electrode and a gate line on a first substrate, forming a gate insulating layer on the gate electrode, forming an active layer on the gate insulating layer and an ohmic contact layer on the active layer, forming source and drain electrodes spaced apart from each other and on the ohmic contact layer, forming a data line that crosses the gate line, etching a portion of the ohmic contact layer between the source and drain electrodes in a chamber of a dry-etching device to expose a portion of the active layer, forming a passivation layer on the first substrate which remains in the chamber, the passivation layer covering the portion of the active layer, forming a pixel electrode connected to the drain electrode, and interposing a liquid crystal layer between the pixel electrode and a second substrate.
申请公布号 US8854565(B2) 申请公布日期 2014.10.07
申请号 US200711819825 申请日期 2007.06.29
申请人 LG Display Co., Ltd. 发明人 Kim Hyo-Uk
分类号 G02F1/136;G02F1/1333;H01L27/12 主分类号 G02F1/136
代理机构 Morgan, Lewis & Bockius LLP 代理人 Morgan, Lewis & Bockius LLP
主权项 1. A method of fabricating a liquid crystal display device, comprising the steps of: forming a gate electrode and a gate line on a first substrate; forming a gate insulating layer on the gate electrode; forming an active layer on the gate insulating layer and an ohmic contact layer on the active layer; forming source and drain electrodes spaced apart from each other and on the ohmic contact layer; forming a data line that crosses the gate line; etching a portion of the ohmic contact layer between the source and drain electrodes in a chamber of a dry-etching device to expose a portion of the active layer; forming a passivation layer on the first substrate which remains in the chamber, the passivation layer covering the portion of the active layer; forming a pixel electrode connected to the drain electrode; and interposing a liquid crystal layer between the pixel electrode and a second substrate, wherein the passivation layer does not overlap the source and drain electrodes, and wherein a portion of the passivation layer directly below the pixel electrode does not overlap the drain electrode.
地址 Seoul KR