Metal aluminum nitride embedded resistors for resistive random memory access cells

摘要

Provided are resistive random access memory (ReRAM) cells and methods of fabricating thereof. A ReRAM cell includes an embedded resistor and resistive switching layer connected in series. The embedded resistor prevents excessive electrical currents through the resistive switching layer, especially when the resistive switching layer is switched into its low resistive state, thereby preventing over-programming. The embedded resistor includes aluminum, nitrogen, and one or more additional metals (other than aluminum). The concentration of each component is controlled to achieve desired resistivity and stability of the embedded resistor. In some embodiments, the resistivity ranges from 0.1 Ohm-centimeter to 40 Ohm-centimeter and remains substantially constant while applying an electrical field of up 8 mega-Volts/centimeter to the embedded resistor. The embedded resistor may be made from an amorphous material, and the material is operable to remain amorphous even when subjected to typical annealing conditions.

主权项

1. A resistive random access memory (ReRAM) cell comprising:
a resistive switching layer operable to change between a low resistive state and a high resistive state; an embedded resistor connected in series with the resistive switching layer,
wherein the embedded resistor is operable to limit a current passing through the resistive switching layer,wherein the embedded resistor comprises a metal aluminum nitride,wherein the metal aluminum nitride comprises one or more metals other than aluminum,wherein the one or more metals comprise one or more of zirconium, vanadium, niobium, chromium, hafnium, tantalum, titanium, tungsten, or molybdenum;wherein the embedded resistor is operable to maintain a constant resistance while the resistive switching layer changes between the low resistive state and the high resistive state; andan electrode disposed between the embedded resistor and the resistive switching layer.