Semiconductor memory device and method for manufacturing the same

摘要

The present technology includes a semiconductor memory device and a method of manufacturing the same. The semiconductor device includes insulation patterns and cell word lines alternately stacked on a substrate. A cell channel layer is formed through the insulation patterns and the cell word lines. A select channel layer is connected to the cell channel layer, and the select channel layer has a resistance higher than a resistance of the cell channel layer. A select line surrounds the select channel layer.

主权项

1. A semiconductor memory device, comprising:
insulation patterns and cell word lines alternately stacked on a substrate; cell channel layers formed through the insulation patterns and the cell word lines; select channel layers connected to the cell channel layers, the select channel layers each having a resistance higher than a resistance of each of the cell channel layers; and select lines surrounding the select channel layers.