| 摘要 |
<p>The present invention is a quartz glass crucible 5 for pulling a silicon single crystal, comprising at least an outer layer portion 23 being a translucent glass layer containing multiple bubbles in it and an inner layer portion 24 being a transparent quartz glass layer having no bubbles and a smooth surface, formed on the inner surface of the outer layer portion 23, wherein the outer layer portion 23 contains bubbles of 0.1 to 0.3 mm in diameter at the density of 1.5 to 5.0×10 4 bubbles/cm 3 . Thus, there are provided a quartz glass crucible for pulling a silicon single crystal, the quartz glass crucible being increased in mechanical strength, making it possible to suppress deformation of a quartz glass crucible for pulling a silicon single crystal during a single crystal pulling process, thereby prevent degradation in yield rate due to dislocation in a single crystal and make the manufacture of a silicon single crystal highly efficient and a method of manufacturing the same quartz glass crucible.</p> |
