| 摘要 |
PROBLEM TO BE SOLVED: To provide: a chemical mechanical polishing pad exhibiting high polishing speed in CMP and capable of achieving both improvement in flatness of a surface to be polished and reduction in polishing defects (scratches); and a chemical mechanical polishing method using the chemical mechanical polishing pad.SOLUTION: A chemical mechanical polishing pad according to the present invention has a polishing layer which contains (A1) an acrylonitrile-butadiene copolymer and (A2) a vinyl chloride resin, and in which, providing that the sum of the (A1) component and the (A2) component is 100 pts.mass, the content ratios of the (A1) component and the (A2) component are 30-90 pts.mass and 70-10 pts.mass, respectively. |
