| 摘要 |
PROBLEM TO BE SOLVED: To provide a transistor manufacturing method capable of manufacturing a transistor where a characteristic fluctuation due to a gate current is suppressed, and to provide an amplifier manufacturing method of manufacturing an amplifier using the transistor.SOLUTION: A transistor Tr is prepared. The transistor Tr includes: an SiC substrate 3; an AlGaN barrier layer 1 and a GaN buffer layer 2 grown on the SiC substrate 3; a source electrode 5 and a drain electrode 7 provided on the AlGaN barrier layer 1; and a gate electrode 6 Schottky-joined to the AlGaN barrier layer 1. The transistor Tr is a high electron mobility transistor (HEMT). A burn-in process is performed on the transistor Tr. In the burn-in process, burn-in is performed through heating of the transistor Tr by giving a gate voltage Vg to the transistor Tr, causing a drain current Id to flow, and giving a drain voltage, thereby reducing a gate curent Ig of the transistor Tr as compared with that before the burn-in. |
