发明名称 |
NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD OF THE SAME |
摘要 |
PROBLEM TO BE SOLVED: To provide a nitride semiconductor optical element which reduces damages caused by etching, and provide a manufacturing method of the nitride semiconductor optical element.SOLUTION: A nitride semiconductor optical element manufacturing method comprises: an amorphous layer formation process of laminating an amorphous layer 16 on a top surface of a semiconductor multilayer; an insulation film formation process of laminating an insulation film 17 on a top surface of the amorphous layer 16; a resist mask formation process of forming a resist film mask 18 having a shape corresponding to a ridge on a top surface of the insulation film 17; an insulation film mask formation process of performing first etching on the insulation film 17 by using the resist film mask 18 to form an insulation film mask; a ridge formation process of performing second etching which is dry etching on the amorphous layer 16 and the semiconductor multilayer by using the insulation film mask to form the ridge; and an amorphous layer removal process of removing the amorphous layer 16 remaining on the top surface of the semiconductor multilayer. |
申请公布号 |
JP2014192507(A) |
申请公布日期 |
2014.10.06 |
申请号 |
JP20130069593 |
申请日期 |
2013.03.28 |
申请人 |
JAPAN OCLARO INC |
发明人 |
SASAKI SHINJI;YANAGISAWA HIRONORI |
分类号 |
H01S5/22;H01L33/32;H01S5/323 |
主分类号 |
H01S5/22 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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