发明名称 NITRIDE SEMICONDUCTOR OPTICAL ELEMENT AND MANUFACTURING METHOD OF THE SAME
摘要 PROBLEM TO BE SOLVED: To provide a nitride semiconductor optical element which reduces damages caused by etching, and provide a manufacturing method of the nitride semiconductor optical element.SOLUTION: A nitride semiconductor optical element manufacturing method comprises: an amorphous layer formation process of laminating an amorphous layer 16 on a top surface of a semiconductor multilayer; an insulation film formation process of laminating an insulation film 17 on a top surface of the amorphous layer 16; a resist mask formation process of forming a resist film mask 18 having a shape corresponding to a ridge on a top surface of the insulation film 17; an insulation film mask formation process of performing first etching on the insulation film 17 by using the resist film mask 18 to form an insulation film mask; a ridge formation process of performing second etching which is dry etching on the amorphous layer 16 and the semiconductor multilayer by using the insulation film mask to form the ridge; and an amorphous layer removal process of removing the amorphous layer 16 remaining on the top surface of the semiconductor multilayer.
申请公布号 JP2014192507(A) 申请公布日期 2014.10.06
申请号 JP20130069593 申请日期 2013.03.28
申请人 JAPAN OCLARO INC 发明人 SASAKI SHINJI;YANAGISAWA HIRONORI
分类号 H01S5/22;H01L33/32;H01S5/323 主分类号 H01S5/22
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