SEMICONDUCTOR LIGHT-RECEIVING ELEMENT

摘要

PROBLEM TO BE SOLVED: To provide a semiconductor light-receiving element capable of operating in a wavelength region of about 2 μm on an InP substrate without providing a buffer layer of an advanced InGaAs light-receiving element for changing a grating constant.SOLUTION: A semiconductor light-receiving element 100 comprises an InP substrate 101, an InGaAsSb light absorbing layer 105 formed on the InP substrate 101 and having a compressive strain structure, and reflecting mirrors 102 and 107 for forming a resonator. The reflecting mirror 102 is formed between the InP substrate 101 and the InGaAsSb light absorbing layer 105 and has a multilayer structure.