| 摘要 |
The invention relates to a machine (1) suitable for plating a cavity of a semi-conductive or conductive substrate such as a through via structure, according to a plating process comprising steps consisting of: a) depositing an insulating dielectric layer in the cavity, b) depositing a layer forming a barrier to the diffusion of the filler metal, c) filling the cavity by electrodeposition of a metal, preferably copper, and d) annealing the substrate, characterised in that the invention comprises a series of wet modules (10-60) configured to carry out steps a), b) and c) by wet process in a chemical bath (B) and at least one additional module (70) suitable for carrying out step d) of annealing the substrate (S), such that the machine (1) is capable of performing the entire cavity plating process. |
