DISPLAY DEVICE AND ELECTRONIC APPARATUS

摘要

PROBLEM TO BE SOLVED: To provide a transistor using an oxide semiconductor film and having a small increase width of parasitic capacitance, with the provision of a back gate electrode having high controllability of a threshold voltage, and a semiconductor device using the transistor.SOLUTION: The transistor using an oxide semiconductor film includes the back gate electrode disposed in a manner of being overlaid with a drain electrode without overlaid with a source electrode. The disposition of the back gate electrode in the above manner enables an increased operating speed without reducing the controllability of the threshold voltage of the transistor, as compared to a case when the back gate electrode is disposed in a manner of being overlaid with both the drain electrode and the source electrode.