| 发明名称 |
LIMITING FLASH MEMORY OVER PROGRAMMING |
| 摘要 |
Certain aspects of this disclosure relate to programming an at least one flash memory cell using an at least one programming pulse with a new programming voltage having a level. The level is maintained in at least one page in a block of a flash memory controller memory, wherein the level varies as a function of a number of programming cycles applied to the at least one flash memory cell. |
| 申请公布号 |
US2014293698(A1) |
申请公布日期 |
2014.10.02 |
| 申请号 |
US201414301798 |
申请日期 |
2014.06.11 |
| 申请人 |
MICRON TECHNOLOGY, INC. |
发明人 |
Beltrami Silvia;Visconti Angelo |
| 分类号 |
G11C16/34 |
主分类号 |
G11C16/34 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
programming a memory cell of a memory block using a programming pulse comprising a voltage level obtained from a first page of the memory block, wherein the voltage level is determined based on a count of other programming pulses used to program memory cells of an other page of the memory block, and wherein the programming pulse is applied in programming pages of the memory block other than the other page. |
| 地址 |
Boise ID US |
