发明名称 |
SEMICONDUCTOR MEMORY APPARATUS |
摘要 |
A semiconductor memory apparatus includes a resistive memory cell; a data sensing unit configured to sense an output voltage, formed by a sensing current supplied to the resistive memory cell, based on a reference voltage, and output data having a value corresponding to the sensing result; and a reference voltage generation unit comprising a dummy memory cell including first and second resistors having first and second resistance values, respectively, and configured to output a voltage formed by the sensing current supplied to the dummy memory cell as the reference voltage. |
申请公布号 |
US2014293689(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201414301458 |
申请日期 |
2014.06.11 |
申请人 |
SK hynix Inc. |
发明人 |
SONG Taek Sang;KWON Dae Han |
分类号 |
G11C13/00 |
主分类号 |
G11C13/00 |
代理机构 |
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代理人 |
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主权项 |
1. A semiconductor memory apparatus comprising:
a resistive memory cell; a first data transmission unit configured to control an amount of current for the resistive memory cell according to a voltage level of a selection signal; a data sensing unit configured to sense a first output voltage formed by a sensing current supplied to the resistive memory cell through the first data transmission unit, based on a reference voltage, and output data having a value corresponding to the sensing result; a dummy memory cell comprising first and second resistors coupled in parallel to each other and having first and second resistance values, respectively; and a second data transmission unit configured to control an amount of current for the dummy memory cell according to the voltage level of the selection signal and output a voltage formed by the sensing current supplied to the dummy memory cell as the reference voltage, wherein the reference voltage has a level in accordance with an intermediate value between the first resistance value and the second resistance value, and the sensing current. |
地址 |
Icheon-si Gyeonggi-do KR |