METHOD AND APPARATUS FOR FABRICATING PHOSPHOR-COATED LED DIES

摘要

The present disclosure involves lighting apparatus. The lighting apparatus includes a first doped semiconductor layer. A light-emitting layer is disposed over the first doped semiconductor layer. A second doped semiconductor layer is disposed over the light-emitting layer. The second doped semiconductor layer has a different type of conductivity than the first doped semiconductor layer. A first conductive terminal and a second conductive terminal are each disposed below the first doped semiconductor layer. A photo-conversion layer is disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer. A bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.

主权项

1. A lighting apparatus, comprising:
a first doped semiconductor layer; a light-emitting layer disposed over the first doped semiconductor layer; a second doped semiconductor layer disposed over the light-emitting layer, the second doped semiconductor layer having a different type of conductivity than the first doped semiconductor layer; a first conductive terminal and a second conductive terminal each disposed below the first doped semiconductor layer; and a photo-conversion layer disposed over the second doped semiconductor layer and on side surfaces of the first and second doped semiconductor layers and the light-emitting layer, wherein a bottommost surface of the photo-conversion layer is located closer to the second doped semiconductor layer than bottom surfaces of the first and second conductive terminals.