APPARATUS AND METHOD FOR REFORMING RESISTIVE MEMORY CELLS
摘要
<p>A memory includes an array of memory cells, a first module and a second module. The first module is configured to compare a first state of a memory cell with a reference. The memory cell is in the array of memory cells. The second module is configured to, subsequent to a read cycle or a write cycle of the memory cell and based on the comparison, reform the memory cell to adjust a difference between the first state and a second state of the memory cell.</p>
申请公布号
WO2014066462(A4)
申请公布日期
2014.10.02
申请号
WO2013US66303
申请日期
2013.10.23
申请人
MARVELL WORLD TRADE LTD.;SUTARDJA, PANTAS;WU, ALBERT;LEE, WINSTON;LEE, PETER;CHANG, RUNZI