发明名称 |
Surge Protection Circuit for Power MOSFETs used as Active Bypass Diodes in Photovoltaic Solar Power Systems |
摘要 |
A protection circuit for metal-oxide-semiconductor field-effect transistors (MOSFETs) that are used as active bypass diodes in photovoltaic solar power systems is disclosed. The protection circuit comprises, a detection circuit for detecting the start of a surge event, a switch disposed to connect the MOSFET's drain to it's gate in response to the start of the surge, a diode in series with the switch, a bistable circuit for keeping the switch closed during the surge, and a means of resetting the bistable circuit after the surge. |
申请公布号 |
US2014291721(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201313851253 |
申请日期 |
2013.03.27 |
申请人 |
Robbins Steven Andrew |
发明人 |
Robbins Steven Andrew |
分类号 |
H01L27/02 |
主分类号 |
H01L27/02 |
代理机构 |
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代理人 |
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主权项 |
1. A protection circuit for protecting a metal-oxide-semiconductor field-effect transistor from electrical surges, comprising:
a switch for coupling the drain of the metal-oxide-semiconductor field-effect transistor to the gate of the metal-oxide-semiconductor field-effect transistor; a diode in series with the switch for preventing current flow from the gate of the metal-oxide-semiconductor field-effect transistor to the drain of the metal-oxide-semiconductor field-effect transistor; a bistable circuit for controlling the switch, the switch being closed whilst the bistable circuit is set and open whilst the bistable circuit is reset; detection circuit for setting the bistable circuit in response to the voltage difference between the drain and source of the metal-oxide-semiconductor field-effect transistor being relatively greater than a first predefined voltage threshold; and a means for resetting the bistable circuit in response to the voltage difference between the drain and source of the metal-oxide-semiconductor field-effect transistor being relatively lesser than a second predetermined voltage threshold. |
地址 |
Calabasas CA US |