发明名称 |
MEMORY SYSTEM AND DRIVING METHOD THEREOF |
摘要 |
A driving method of a nonvolatile memory device includes receiving a program command and an address. The method includes changing a number of adjacent zones of a plurality of zones formed of unselected word lines according to a location of a selected word line corresponding to the received address. The method further includes applying different zone voltages to the number of adjacent zones and remaining zones. The nonvolatile memory device includes a plurality of strings formed to penetrate word lines stacked on a substrate in a plate shape. |
申请公布号 |
US2014293693(A1) |
申请公布日期 |
2014.10.02 |
申请号 |
US201414197723 |
申请日期 |
2014.03.05 |
申请人 |
Samsung Electronics Co., Ltd. |
发明人 |
NAM Sang-Wan;KO Kuihan;AHN Yang-Lo;PARK Kitae |
分类号 |
G11C16/10;G11C16/08 |
主分类号 |
G11C16/10 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Suwon-Si KR |