RESISTIVE RANDOM ACCESS MEMORY

摘要

Disclosed is a nonvolatile resistive random access memory. The nonvolatile resistive random access memory includes an upper electrode, a lower electrode, an ion supply layer formed on the lower electrode, and a resistance change layer formed on the ion supply layer. The ion supply layer includes copper-doped carbon. A low-power switching operation is performed because the optimal filament is formed by limiting the number of supplied ions, without using the existing method that supplies infinite ions by using a metal electrode.

主权项

1. A resistive random access memory (ReRAM) comprising:
an upper electrode; a lower electrode; an ion supply layer formed on the lower electrode; and a resistance change layer formed on the ion supply layer, wherein the ion supply layer comprises copper-doped carbon.