PREPARATION PROCESS FOR ANTI-POTENTIAL INDUCED DEGRADATION SOLAR CELL

摘要

A preparation process for an anti-potential induced degradation solar cell, comprising the following steps: (a) cleaning a silicon chip, removing a damaged layer and making texture; (b) placing the silicon chip into a pipe diffusion furnace to diffuse; (c) removing phosphosilicate glass and a back junction from the diffused silicon chip; (d) growing a layer of silicon dioxide on the surface of an emitter, and then depositing a layer of silicon nitride or directly depositing a silicon nitride passivation antireflection layer on the surface of the emitter; (e) screen painting a back electrode and a front electrode; and (f) sintering, testing and selecting. The preparation process for an anti-potential induced degradation solar cell can improve the anti-potential induced degradation capability of a solar cell and prepared assemblies thereof, thereby ensuring that the performance of the assemblies is stable in a high-voltage working environment.