发明名称 MOS TRANSISTOR STRUCTURES WITH ELONGATED CONTACTS
摘要 Elongated metal contacts (192) with longitudinal axes that lie in a first direction are formed to make electrical connections to elongated source (120V1, 120V2) and drain regions (122V1, 122V2) with longitudinal axes that lie in the first direction, and elongated metal contacts (194) with longitudinal axes that lie a second direction are formed to make electrical connections to elongated source (120H1, 120H2) and drain regions (122H1, 122H2) with longitudinal axes that lie the second direction, where the second direction lies orthogonal to the first direction.
申请公布号 WO2014160726(A1) 申请公布日期 2014.10.02
申请号 WO2014US31761 申请日期 2014.03.25
申请人 TEXAS INSTRUMENTS INCORPORATED;TEXAS INSTRUMENTS JAPAN LIMITED 发明人 MCMULLAN, RUSSELL, CARLTON;BENAISSA, KAMEL
分类号 H01L21/308;H01L27/092 主分类号 H01L21/308
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