| 摘要 |
Provided are a thin film and a method for manufacturing a thin film. The method comprises: implanting ions in the surface of an original substrate by means of an ion-implantation method, thereby forming a thin-film layer, a separating layer and a remainder layer in the original substrate, the thin-film layer being located on the surface of the original substrate, the separating layer being located between the thin-film layer and the remainder layer, and the implanted ions being distributed in the separating layer; enabling a target substrate to be in contact with the thin-film layer of the original substrate, and then bonding the original substrate to the target substrate together using a wafer bonding method, so as to form a bonding body; placing the bonding body into a preset container to heat the bonding body, so as to separate the thin-film layer from the remainder layer; and continuing to heat the thin-film layer and the target substrate to the preset time in the condition of a high-pressure atmosphere after the thin-film layer is separated from the remainder layer. The present invention can greatly reduce the defect density of a thin film, and manufacture a thin film which has a large size, the same area as a wafer, a thickness of a nanometer grade and an uniform film thickness. |
