| 摘要 |
In one embodiment, a method includes masking a sensor stack with a first mask, milling exposed regions of the sensor stack for defining a back edge of the sensor stack, forming a tantalum oxide layer along the back edge, removing the first mask, masking the sensor stack with a second mask, and milling exposed regions of the sensor stack for defining side edges of the sensor stack, a width of the sensor stack in a track width direction being defined between the side edges. In another embodiment a system includes a sensor stack of thin films having a back edge, and a tantalum oxide layer extending along the back edge. |
