COMPOUND SEMICONDUCTOR STACK AND SEMICONDUCTOR DEVICE

摘要

The present invention is provided with: a substrate (101) having an electrical resistance of at least 1 × 105 &OHgr;cm; a first compound semiconductor layer (102) formed on the substrate (101), doped with carbon, and provided so as to contain Ib and Sb; and a second compound semiconductor layer (103) formed on the first compound semiconductor layer (102), the second compound semiconductor layer (103) having a smaller carbon concentration than the first compound semiconductor layer (102) and containing In and Sb. The film thickness of the first compound semiconductor layer (102) is 0.005 to 0.2 μm. The carbon concentration in the first compound semiconductor layer (102) is 1 × 1015 to 5 × 1018 cm-3.