| 摘要 |
PROBLEM TO BE SOLVED: To provide a temperature measuring device and a temperature measurement method enabling the temperature of an area of a prescribed size of a substrate to be accurately measured with an infrared camera, and a heat treatment apparatus having the temperature measuring device built into it.SOLUTION: Infrared light radiated from the rear face of a partial area of a semiconductor wafer W whose temperature is raised by irradiation heating with light from a halogen lamp HL are received by a pyrometer 20 to accurately measure the temperature of the partial area. An infrared camera 80 receives infrared light radiated from the whole area of the semiconductor wafer W and measures the intensity of the infrared light. Although the emissivity of the semiconductor wafer W on which a pattern is formed is unknown, the emissivity of the partial area is figured out from the temperature of the partial area and the infrared intensity of the partial area measured by the infrared camera 80, and on the basis of the figured out emissivity, the temperature of the whole area of the semiconductor wafer W is figured out. |
