发明名称 SEMICONDUCTOR DEVICE DRIVING CIRCUIT AND SEMICONDUCTOR DEVICE DRIVING UNIT
摘要 PROBLEM TO BE SOLVED: To provide a semiconductor device driving circuit capable of being downsized.SOLUTION: A semiconductor device driving circuit 100 includes: a high-side driver 3 that on/off-drives a high-side switching element 5; a low-side driver 4 that on/off-drives a low-side switching element 6; and a switching element 14 for control that is operatively associated with on of the high-side switching element 5 to turn on. A positive-potential input terminal of the low-side driver 4 is connected to a positive potential VCC of an external first voltage source 11, and a negative-potential input terminal of the low-side driver 4 is connected to a negative side of an external second voltage source 12. A positive side of the second voltage source is connected to a reference voltage GND, and an external capacitor 18 for negative potential is interposed between a connection point VS and the negative-potential input terminal of the high-side driver 3. The high-side switching element 5 and the switching element 14 for control form a loop with the capacitor 18 for negative potential and a high voltage source 8.
申请公布号 JP2014187825(A) 申请公布日期 2014.10.02
申请号 JP20130061425 申请日期 2013.03.25
申请人 MITSUBISHI ELECTRIC CORP 发明人 MAKISHIMA HITOSHI;YAMAMOTO AKIO;O AZUMA
分类号 H02M1/08 主分类号 H02M1/08
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