Asymmetric Spacers

摘要

A semiconductor device having asymmetric spacers and steps for forming the same are disclosed. The spacers have difference capacitances, with the spacer having a higher capacitance formed over a source region of the device and the spacer having a lower capacitance formed over a drain region of the device. Embodiments of the disclosed invention include spacers made from different materials, having different or substantially equal thicknesses.

主权项

1. A semiconductor device comprising:
a gate formed on a top surface of a substrate, the gate having a first sidewall and a second sidewall, the first sidewall positioned opposite the second sidewall; a first spacer formed on and adjacent to the first sidewall of the gate, wherein the first spacer is made of a first material; and a second spacer formed on and adjacent to the second sidewall of the gate, wherein the second spacer is made of a second material different from the first material.