| 摘要 |
[Problem] To enable the formation of a satisfactory pattern of protrusions and recesses in a protective film formed on a substrate having a recessed part on the rear surface thereof. [Solution] A method for etching a protective film (11) in which a substrate (10) having a protective film (11) is formed on a front surface thereof and a recessed part (13) on the rear surface on the opposite side from this front surface is provided, a resist pattern (12) is formed on the protective film (11), and with the resist pattern (12) as a mask, the protective film (11) is etched using plasma while applying a bias voltage. The bias voltage is increased according to the extent of the reduction in the relative dielectric constant of the corresponding region (R2) of the substrate (10) that correspond to the coated region (R1) on the front surface on which the protective film (11) is present. |
