发明名称 SEMICONDUCTOR WAFER AND METHOD OF MANUFACTURING SEMICONDUCTOR ELEMENT
摘要 <p>PROBLEM TO BE SOLVED: To provide a semiconductor wafer that improves the uniformity of the amount of recess in a wafer surface, and a method of manufacturing a semiconductor element.SOLUTION: A semiconductor wafer according to an embodiment includes a plurality of semiconductor elements. The semiconductor elements include: a first semiconductor layer; a second semiconductor layer that is provided thereon; a third semiconductor layer that is provided on the second semiconductor layer; a first electrode that is provided inside a trench which extends from the third semiconductor layer into the first semiconductor layer; and a second electrode that is provided on the first electrode. The cross section of the first electrode which is perpendicular to the extending direction of the trench is wider in semiconductor elements provided in the center than the one that is provided in an outer periphery of the semiconductor wafer. Intervals between an end of the first electrode which faces the second electrode, and a surface on a side opposite to the second semiconductor layer of the third semiconductor layer are the same in both of the semiconductor elements that are provided at the outer periphery and the center.</p>
申请公布号 JP2014187197(A) 申请公布日期 2014.10.02
申请号 JP20130061124 申请日期 2013.03.22
申请人 TOSHIBA CORP 发明人 AKAIKE YASUHIKO;TAKAHASHI NORIHIRO;NISHIKAWA YUKIE
分类号 H01L29/78;H01L21/3065;H01L21/336 主分类号 H01L29/78
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