| 摘要 |
<p>PROBLEM TO BE SOLVED: To provide a vapor deposition apparatus capable of easily performing co-doping of a p-type impurity and an n-type impurity.SOLUTION: The vapor deposition apparatus comprises: a reaction chamber; a first gas supply pathway for supplying Si source gas to the reaction chamber; a second gas supply pathway for supplying C source gas to the reaction chamber; a third gas supply pathway for supplying an n-type impurity source gas to the reaction chamber; a fourth gas supply pathway for supplying a p-type impurity source gas to the reaction chamber; and a control part for controlling an amount of the n-type impurity and the p-type impurity source gas at a predetermined ratio and introducing the gas into the reaction chamber. When an element A is used as the p-type impurity and an element D is used as the n-type impurity, a combination of the element A and the element D is at least one combination of Al, Ga or In, N, B and P.</p> |
